| 摘要 |
PURPOSE:To prevent inter-electrode short-circuit by removing an oxide film by ion etching after etching a conductive layer by gas, which is generated by dissociating gas including F, when the gate oxide film and the conductive layer on this film are etched to constitute an electrode. CONSTITUTION:Poly-Si 32 is laminated on gate oxide film 31 of p-type Si substrate 30 and is make conductive by phosphorus diffusion and is subjected to plasma etching by gas generated by dissociating gas including F through resistor mask 33, thereby generating an eaves part in poly-Si 34. When exposed oxide films 35a to 35c are removed by ion etching with the resistor mask left as it is, no eaves part is generated, and resistor mask 33 and film 31 are formed in self-matching. The mask is removed to form second gate oxide films 37a to 37c and oxide films 38a to 38c. The eaves width of layer 34 is set properly to be able to form films 38 and 37 simultaneously independently, so that no sharply scooped part is generated in electrode 34. Next, poly-Si electrodes 39a to 39c are formed. By this constitution, inter-electrode short-circuit can be prevented. |
