SEMICONDUCTOR MEMORY ELEMENT OPERABLE AT HIGH SPEED AND WITH LOW POWER CONSUMPTION

摘要

MEMORY CIRCUIT A memory circuit comprises a semiconductor element circuit having equivalently a PNPN four-layer structure, at least an NPN transistor and a diode. An N-type emitter of the semiconductor element circuit is connected to the base of the NPN transistor, while a P-type base of the circuit is connected to the collector of the NPN transistor through the diode. The semiconductor element circuit has a positive feedback loop which is additionally provided with another feedback loop extending across the P-type base and the N-type emitter of the semiconductor element circuit, whereby in the ON holding state of the memory circuit the semiconductor element circuit is operated as a current stabilizing circuit and the transistor included in the additional feedback loop is stabilized in a controlled staturation state. The memory circuit can thus be operated at a high speed with a low power consumption.