发明名称 THYRISTOR GATE CONTROL FOR INDUCTION HEATING APPLIANCE
摘要 <p>A gate controlled thyristor (SCR) used for switching at high frequency for induction heating is supplied with a negative bias during an interval ranging from the point where the forward current reaches to zero to the time of reapplication of a subsequent gating signal. This provides high dv/dt (the rate of rise of anode voltage) capability and small turn off time to the device.</p>
申请公布号 CA1041180(A) 申请公布日期 1978.10.24
申请号 CA19750229548 申请日期 1975.06.17
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 KIUCHI, MITSUYUKI;MIZUKAWA, TAKUMI
分类号 H02M1/06;H02M7/515;H05B6/06;(IPC1-7):24C7/00;05B5/08 主分类号 H02M1/06
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