发明名称 |
THYRISTOR GATE CONTROL FOR INDUCTION HEATING APPLIANCE |
摘要 |
<p>A gate controlled thyristor (SCR) used for switching at high frequency for induction heating is supplied with a negative bias during an interval ranging from the point where the forward current reaches to zero to the time of reapplication of a subsequent gating signal. This provides high dv/dt (the rate of rise of anode voltage) capability and small turn off time to the device.</p> |
申请公布号 |
CA1041180(A) |
申请公布日期 |
1978.10.24 |
申请号 |
CA19750229548 |
申请日期 |
1975.06.17 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
KIUCHI, MITSUYUKI;MIZUKAWA, TAKUMI |
分类号 |
H02M1/06;H02M7/515;H05B6/06;(IPC1-7):24C7/00;05B5/08 |
主分类号 |
H02M1/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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