| 摘要 |
<p>1493815 Semiconductor devices GENERAL ELECTRIC CO 28 Get 1974 [30 Oct 1973] 46445/74 Heading H1K [Also in Division B1] A plurality of separate spaced recrystallized zones extending into the interior of a semiconductor body 30 from a first surface and differing from the body in conductivity value and/or type are formed by etching spaced recesses at most 30 Á deep in the surface through a mask, e.g. of oxide and/or photoresist, depositing a metal so that it substantially fills the recesses, heating the body to form in each recess a liquid body comprising a solution of the semiconductor and the metal, and establishing a temperature gradient across the body 30 with the first surface at the lower temperature and so that thermomigration of the liquid body 35 occurs completely or partly through the thickness of the body 30 leaving behind a "trail" of recrystallized material. Using this method Sb-doped Au or Al may be thermomigrated through Si and Cr may be the dopant in SiC. Ge, GaAs and other III-V compounds, and II-VI compounds are also mentioned. A particular embodiment is a varactor diode having ten PN junctions formed in the manner described.</p> |
