| 摘要 |
<p>A FET based binary data storage element, is used in which a FET has a drain, and a source. It has two gate electrodes and one auxiliary electrode overlapping the source and drain electrodes. A FET constructed on a P type substrate (P) has a source (S), drain, drain (D), two gate electrodes (G1, G2) and an auxiliary electrode (LK) which overlaps the drain and source electrodes slightly but is insulated from them by thin oxide layers. An enriched P type dosing of the substrate around the source overlap presents certain poisoning effects. The device can be built into a matrix storage unit of such elements to form a binary store and operates with fairly low voltages.</p> |
