SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes: a first conductivity-type collector region; a second conductivity-type field stop region disposed on the collector region; a second conductivity-type drift region, which is disposed on the field stop region and has an impurity concentration lower than the field stop region; a first conductivity-type base region disposed on the drift region; and a second conductivity-type emitter region disposed on the base region, wherein an impurity concentration gradient in a film thickness direction of the field stop region is larger in a region adjacent to the collector region than in a region adjacent to the drift region.

主权项

1. A semiconductor device comprising:
a first conductivity-type collector region; a second conductivity-type field stop region disposed on the collector region; a second conductivity-type drift region, which is disposed on the field stop region and has an impurity concentration lower than the field stop region; a first conductivity-type base region disposed on the drift region; a second conductivity-type emitter region disposed on the base region; a gate insulating film disposed between the drift region and the emitter region so as to face to the base region; and a gate electrode disposed via the gate insulating film so as to be opposed to the base region, wherein an impurity concentration gradient in a film thickness direction of the field stop region is larger in a region adjacent to the collector region than in a region adjacent to the drift region.