| 摘要 |
PURPOSE:To obtain the title porcelain having both low specific resistance at room temperature and large withstand voltage by a method wherein the porcelain is heated up at a specific heating rate between 1200 deg.C and the temperature of calcination. CONSTITUTION:Sb2O3 and Ta2O5 of 0.1 to 0.25mol% in total, SiO2 of 0.05 to 1.0mol%, TiO2 of 0.5 to 2.0mol% and MnO of 0.03 to 0.10mol% are contained in the composition of 100mol% in which the barium electrons of 5 to 20mol% of barium titanate is replaced with strontium. The temperature rising speed between 1200 deg.C and the calcination temperature should be in the range of 200 deg.C/h to 500 deg.C/h. As a result, a semiconductor porcelain of barium titanate, having the specific resistance at the normal temperature and relatively large positive resistance temperature characteristics and high withstand voltage, can be obtained. |
