MONOLITHIC SEMICONDUCTOR APPARATUS ADAPTED FOR SEQUENTIAL CHARGE TRANSFER

摘要

The invention is a form of monolithic semiconductor apparatus adapted for the storage and manipulation of electronic signals representing information. Basically, the apparatus includes a plurality of spaced localized zones of one type semiconductivity adjacent the surface of a semiconductive bulk portion of the other type conductivity. A plurality of localized electrodes, registered in one-to-one correspondence with the localized zones, are disposed over a dielectric layer covering the semiconductive portions. Each of the electrodes is delimited in lateral extent so as to extend over substantially all of the space between a pair of closest zones and over a substantial portion of only one of that pair of zones so that the capacitance between the electrode and the zone over which it extends is substantially greater than the capacitance between that electrode and the other zone of that pair of zones. Signals in the form of varying deficiencies of majority carriers are stored temporarily in the localized zones and are gated sequentially from one zone to the zone next adjacent upon application of two-phase clock pulses to alternate electrodes. Constant background pulses upon which signals are superimposed are circulated to reduce distortion.