FABRICATING METHOD OF SEMICONDUCTOR DEVICE

摘要

The method for manufacturing a semiconductor device having a silicide film formed on a silicon layer, comprises the step of: forming a buffer film on the silicon; forming a silicon and a conduction layer including a high melting point metal on the buffer film; and carrying out heat treatment of the resulting structure. The silicide film of regular thickness is uniformly formed without generation of lumps on an active region of element or on a gate electrode.