| 摘要 |
PROBLEM TO BE SOLVED: To obtain the reference circuit suitable for a storage device having memory cells formed of insulating gate transistors(TR) by providing a dividing circuit which selectively lowers a reference level generated from a 1st matching current, etc. SOLUTION: A reference circuit 308 has a reference cell, a 1st current mirror circuit 420, an output device, and the dividing circuit. The reference cell generates the reference voltage in response to a control voltage and the 1st current mirror circuit 420 has a 1st branch 428 which is so connected as to receive a reference current and a 2nd branch 422 which generates a matched current. The output device receives the matched current and supplies the reference level generated from the matched current. The dividing circuit lowers the reference level generated from the 1st matched current selectively from a 1st full reference level to a 2nd lowered reference level. |
