发明名称 |
METHODS OF FORMING PATTERNS HAVING DIFFERENT SHAPES |
摘要 |
A method of forming patterns includes forming pillars and first peripheral patterns on an underlying layer, forming a separation wall layer covering sidewalls of the pillars and the first peripheral patterns, forming blocking portions on the separation wall layer to fill first openings between the first peripheral patterns, forming a block copolymer layer filling gap regions between the pillars, annealing the block copolymer layer to form first domains and a second domain surrounding the first domains, removing the first domains and removing portions of the separation wall layer to form second openings, removing the second domain and the blocking portions, removing the pillars and the first peripheral patterns to form third openings and fourth openings, and patterning the underlying layer to form fifth openings that extend from the second and third openings and sixth openings that extend from the fourth openings. |
申请公布号 |
US2016254153(A1) |
申请公布日期 |
2016.09.01 |
申请号 |
US201514816848 |
申请日期 |
2015.08.03 |
申请人 |
SK hynix Inc. |
发明人 |
PARK Jong Cheon;KIM You Song;KIM Sung Kwang;LEE Jung Hyung |
分类号 |
H01L21/033 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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主权项 |
1. A method of forming patterns, the method comprising:
forming pillars and first peripheral patterns on an underlying layer, the first peripheral patterns providing first openings therebetween; forming a separation wall layer on the underlying layer to cover sidewalls of the pillars and sidewalls of the first peripheral patterns; forming blocking portions on the separation wall layer to fill first gap regions in the first openings; forming a block copolymer layer on the separation wall layer to fill second gap regions between the pillars; annealing the block copolymer layer to form first domains and a second domain surrounding the first domains from the block copolymer layer, the second domain isolating the first domains from each other; selectively removing the first domains to expose portions of the separation wall layer and selectively removing the exposed portions of the separation wall layer to form second openings; removing the second domain and the blocking portions; removing the pillars and the first peripheral patterns to form third openings and fourth openings, respectively; and patterning the underlying layer to form fifth openings that extend from the second and third openings and sixth openings that extend from the fourth openings, wherein the fifth and sixth openings are formed to penetrate the underlying layer. |
地址 |
Gyeonggi-do KR |