| 摘要 |
<p>PURPOSE:To obtain a manufacturing method which denatures a semiconductor or an insulating film and which improves the shift of a flat-band voltage by a method wherein a heating operation in a specific time is performed in an atmosphere which contains the gas of water in a specific temperature range and in a specific partial-pressure range. CONSTITUTION:In the manufacturing method of a semiconductor device, at least one out of a semiconductor and an insulating film is denatured via a heating process which is executed, for 15 seconds or higher and 20 hours or lower, in an atmosphere which contains the gas of water (H2O) at 20 to 400 deg.C, at a partial pressure of 1Torr or higher and at a saturated vapor pressure or lower. Then, the atmosphere is set as an atmosphere which contains at least one kind out of oxygen, nitrogen, hydrogen and dinitrogen monoxide at its partial pressure of 1 Torr or higher and at 10 atmospheric pressure or lower. The semiconductor device as a target is an insulated-gate field-effect transistor which is manufactured at 600 deg.C or lower, and a heating treatment is executed in the atmosphere containing the gas of water after a gate has been formed. In addition, the insulating film is formed of one kind out of SiO2, SiN and SiON.</p> |
