发明名称 PHOTODETECTING DEVICE AND MANUFACTURING METHOD THEREOF, AND IMAGE SENSOR AND MANUFACTURING METHOD THEREOF
摘要 A photodetecting device, a method of manufacturing the photodetecting device, an image sensor, and a method of manufacturing the image sensor are provided. The photodetecting device includes a first insulation layer, a silicon layer disposed on the first insulation layer, a metal plug disposed through the first insulation layer and the silicon layer, a silicon wire disposed on the silicon layer, and an electrode connected to the silicon wire.
申请公布号 US2016240580(A1) 申请公布日期 2016.08.18
申请号 US201615002755 申请日期 2016.01.21
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 XIANYU Wenxu;PARK YOUNGYOUNG;YANG WOOYOUNG;LEE JEONGYUB
分类号 H01L27/146 主分类号 H01L27/146
代理机构 代理人
主权项 1. A photodetecting device comprising: a first insulation layer; a silicon layer disposed on the first insulation layer; a metal plug disposed through the first insulation layer and the silicon layer; a silicon wire disposed on the silicon layer; and an electrode connected to the silicon wire.
地址 SUWON-SI KR