发明名称 |
PHOTODETECTING DEVICE AND MANUFACTURING METHOD THEREOF, AND IMAGE SENSOR AND MANUFACTURING METHOD THEREOF |
摘要 |
A photodetecting device, a method of manufacturing the photodetecting device, an image sensor, and a method of manufacturing the image sensor are provided. The photodetecting device includes a first insulation layer, a silicon layer disposed on the first insulation layer, a metal plug disposed through the first insulation layer and the silicon layer, a silicon wire disposed on the silicon layer, and an electrode connected to the silicon wire. |
申请公布号 |
US2016240580(A1) |
申请公布日期 |
2016.08.18 |
申请号 |
US201615002755 |
申请日期 |
2016.01.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
XIANYU Wenxu;PARK YOUNGYOUNG;YANG WOOYOUNG;LEE JEONGYUB |
分类号 |
H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
|
代理人 |
|
主权项 |
1. A photodetecting device comprising:
a first insulation layer; a silicon layer disposed on the first insulation layer; a metal plug disposed through the first insulation layer and the silicon layer; a silicon wire disposed on the silicon layer; and an electrode connected to the silicon wire. |
地址 |
SUWON-SI KR |