| 摘要 |
PROBLEM TO BE SOLVED: To avoid separation of laminated plating layers, when performing wire bonding on an inner lead having a laminated plated structure. SOLUTION: A semiconductor chip 3 is bonded to a die pad 2 of a lead frame 1, having laminated plated layers made of nickel, palladium, and gold. Then, a metallic thin wire 6, made of gold is pressed with a load of approximately 60 g against an electrode pad 4 of the semiconductor chip 3 via a bonding tool 20, and ultrasonic waves having an output of approximately 55 mW is applied to perform first bonding process. Next, the metallic thin wire 6 is pressed with a load of 150 to 250 g against an inner lead 5, and ultrasonic wave with an output of 0 to 20 mW is applied to perform the second bonding process. In a second bonding process, bonding appropriate to the characteristics of the laminated plating layers is performed with a large pressing load and a small output of ultrasonic waves. This enables strong bonding in a short time, without causing peeling of a gold plated layer. |
