| 摘要 |
PURPOSE: To prevent crack, etc., of bonding pad at the time of bonding an internal lead and a bump by arbitrarily adjusting the shape and aspect ratio of bump by exposing 1st and 2nd photosensitive films under a prescribed energy more than twice and forming a photosensitive film pattern through development, etc. CONSTITUTION: All the surface of the bonding pad of semiconductor substrate 31 is coated with 1st and 2nd photosensitive liquid for defining an area to form a semiconductor chip bump 40, and 1st and 2nd photosensitive films 32 and 37 formed by the 1st and 2nd photosensitive liquid are exposed under the prescribed energy more than twice at least. Next, the exposed 1st and 2nd photosensitive films 32 and 37 are developed, a photosensitive film pattern 39 is formed and after the semiconductor chip bump 40 having a prescribed shape is formed on the area of bump formation defined by the photosensitive film pattern 39, the photosensitive film pattern 39 is removed. For example, the photosensitive film pattern 39 is formed so that its height can be 10 μm or more. |
