METHOD FOR MANUFACTURING CONDUCTIVE WIRES IN SEMICONDUCTOR DEVICES

摘要

PURPOSE: A conductive wire manufacturing method is provided to be capable of prohibiting deformation of shape such as contraction and bending of the conductive wires, by forming a capping layer having an anti-stress property at the bottom of the conductive wires. CONSTITUTION: An insulating film(64) having a high fluidity is formed on a semiconductor substrate(60) so that the entire surfaces of the structure on the semiconductor substrate can be flattened. A capping layer(65) made of one of an oxide film, a nitride film or an oxynitride film that are not easily deformed by annealing process is formed in thickness of about 500 angstrom on the insulating film(64). A conductive film is formed on the capping layer(65) and is then patterned, thus forming a conductive wire(68). Then, the conductive wire is treated by annealing process so that it can be stabilized.