METHOD OF MANUFACTURING CONTACT OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a contact of a semiconductor device is provided to improve the yield rate and the reliability of the semiconductor device by preventing the short with respect to a field emission display device. CONSTITUTION: A gate electrode formed with a mask insulating layer pattern is formed on a semiconductor substrate(11). The first insulating layer spacer is formed at the mask insulating layer pattern and a sidewall of the gate electrode. A bit line contact plug and a storage electrode contact plug are formed on a cell area of the semiconductor substrate(11). Then, a source/drain junction is formed on the semiconductor substrate(11). After forming the second insulating layer(29), a bit line is formed such that it makes contact with the bit line contact plug. The third insulating layer(31) is formed on the resulted structure. Then, a storage electrode(39) is formed such that it makes contact with the storage electrode contact plug.