发明名称 |
Complementary metal-oxide-semiconductor image sensor and method for fabricating the same |
摘要 |
A complementary metal-oxide-semiconductor (CMOS) image sensor and a method for fabricating the same are provided. The CMOS image sensor includes: a pixel region provided with a plurality of unit pixels, each including a buried photodiode and a floating diffusion region; and a logic region provided with CMOS devices for processing data outputted from the unit pixels, wherein a self-aligned silicide layer is formed on gate electrodes and source/drain regions of the CMOS devices in the logic region while a self-aligned silicide blocking layer is formed over the pixel region.
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申请公布号 |
US7358552(B2) |
申请公布日期 |
2008.04.15 |
申请号 |
US20050236047 |
申请日期 |
2005.09.26 |
申请人 |
MAGNACHIP SEMICONDUCTOR, LTD. |
发明人 |
LEE JU-IL |
分类号 |
H01L31/062;H01L21/8238;H01L27/092;H01L27/146;H04N5/335;H04N5/357;H04N5/369;H04N5/374 |
主分类号 |
H01L31/062 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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