发明名称 Metal interconnect modeling
摘要 A method performed by a computing system for modeling metal routing in a circuit design includes extracting physical parameters of a metal interconnect and substrate for the circuit design, determining a substrate capacitance value from a database, the substrate capacitance being at a maximum frequency of a frequency range to be simulated, modeling the metal interconnect with a symmetric lumped transmission line model, defining a substrate resistance value for the symmetric lumped transmission line model to be such that the substrate resistance value multiplied by the substrate capacitance value is within a range of about 100-6000 ohm femtofarads, and simulating the symmetric lumped transmission line model across the frequency range using the substrate resistance value as the substrate resistance of the symmetric lumped transmission line model.
申请公布号 US9507906(B2) 申请公布日期 2016.11.29
申请号 US201514812704 申请日期 2015.07.29
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 Yen Hsiao-Tsung
分类号 G06F17/50 主分类号 G06F17/50
代理机构 Haynes and Boone, LLP 代理人 Haynes and Boone, LLP
主权项 1. A method performed by a computing system for modeling metal routing in a circuit design, the method comprising: extracting physical parameters of a metal interconnect and substrate for the circuit design; determining a substrate capacitance value from a database, the substrate capacitance being at a maximum frequency of a frequency range to be simulated; modeling the metal interconnect with a symmetric lumped transmission line model; defining a substrate resistance value for the symmetric lumped transmission line model to be such that the substrate resistance value multiplied by the substrate capacitance value is within a range of about 100-6000 ohm femtofarads; and simulating the symmetric lumped transmission line model across the frequency range using the substrate resistance value as the substrate resistance of the symmetric lumped transmission line model.
地址 Hsin-Chu TW