METHODS OF FORMING TRANSISTOR STRUCTURES

摘要

Methods for fabricating transistor structures are provided, the methods including: forming a fin structure with an upper fin portion and a lower fin portion, the upper fin portion including a sacrificial material; forming a gate structure over the fin; selectively removing the upper fin portion to form a tunnel between the gate structure and lower fin portion; and providing a channel material in the tunnel to define the channel region of the gate structure. The sacrificial material may be a material that can be selectively etched without etching the material of the lower fin portion. The channel material may further be provided to form source and drain regions of the transistor structure, which may result in a junctionless FinFET structure.

主权项

1. A method comprising:
facilitating fabricating a transistor structure, the facilitating fabricating comprising:
forming a fin above a substrate, the fin having a lower fin portion and an upper fin portion, the upper fin portion comprising a sacrificial material;forming a gate structure over the fin;selectively removing the upper fin portion, the selectively removing forming a tunnel between the gate structure and the lower fin portion; andproviding a channel material in the tunnel, the channel material forming a channel region of the gate structure.