| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a silicon carbide crystal that can manufacture a high-quality silicon carbide crystal by growing a uniform crystal on the undersurface of a seed crystal in crystal growth of silicon carbide by a solution growth method.SOLUTION: A columnar seed crystal holder 5 is used in a solution growth method in which the undersurface of a seed crystal 4 made of silicon carbide is brought into contact with a solution of carbon and silicon retained in a crucible having an opening on the top edge and then pulled up to grow a silicon carbide crystal from the solution on the undersurface of the seed crystal 4. The seed crystal holder includes a first holder 14 that holds the seed crystal 4 on the undersurface thereof and has a hollow B having an opening in the area exclusive of the periphery of the top surface thereof and a columnar second holder 15 that is fixed to periphery of the top surface of the first holder 14 so as to cover the opening. |
