Method of fabricating semiconductor device

摘要

A method of fabricating a semiconductor device is provided. A plurality of sacrificial gates and a plurality of sacrificial gate dielectric layers thereunder are formed on a substrate. An interlayer dielectric layer is filled between the sacrificial gates. A protective layer is formed on the interlayer dielectric layer. The sacrificial gates and the sacrificial gate dielectric layers are removed to form an opening, wherein the interlayer dielectric layer is protected by the protective layer from recessing. A stacked gate structure is formed in the opening, wherein the protective layer is removed.

主权项

1. A method of fabricating a semiconductor device, comprising:
forming a plurality of sacrificial gates and a plurality of sacrificial gate dielectric layers thereunder on a substrate; before forming the plurality of sacrificial gates and the plurality of sacrificial gate dielectric layers, patterning the substrate to form a plurality of fins, wherein the plurality sacrificial gate dielectric layers are disposed on the plurality of fins; filling an interlayer dielectric layer between the sacrificial gates; forming a protective layer on the interlayer dielectric layer; removing the sacrificial gates and the sacrificial gate dielectric layers to form an opening, wherein the interlayer dielectric layer is protected by the protective layer from recessing; and forming a stacked gate structure in the opening, wherein the protective layer is removed.