Backside illumination image sensor and image-capturing device

摘要

A backside illumination image sensor that includes a semiconductor substrate with a plurality of photoelectric conversion elements and a read circuit formed on a front surface side of the semiconductor substrate, and captures an image by outputting, via the read circuit, electrical signals generated as incident light having reached a back surface side of the semiconductor substrate is received at the photoelectric conversion elements includes: a light shielding film formed on a side where incident light enters the photoelectric conversion elements, with an opening formed therein in correspondence to each photoelectric conversion element; and an on-chip lens formed at a position set apart from the light shielding film by a predetermined distance in correspondence to each photoelectric conversion element. The light shielding film and an exit pupil plane of the image forming optical system achieve a conjugate relation to each other with regard to the on-chip lens.

主权项

1. A backside illumination image sensor, comprising:
a plurality of pairs of photoelectric conversion elements each including a pair of light receiving areas that receive incident light having entered a back surface of a semiconductor substrate through an image forming optical system, a read circuit being formed on a front surface of the semiconductor substrate; an on-chip lens formed at a position set apart from the pair of light receiving areas; a barrier member that is disposed parallel to an optical axis of the on-chip lens, between the on-chip lens and the pair of light receiving areas; a first separating area that is constituted with a type of semiconductor and that separates unit pixel areas from each other, each of the unit pixel areas including each pair of photoelectric conversion elements; and a second separating area that is constituted with the type of semiconductor and that forms a boundary between the each pair of photoelectric conversion elements.