发明名称 CRYSTAL PATTERN FORMING METHOD, PIEZOELECTRIC FILM MANUFACTURING METHOD, PIEZOELECTRIC ELEMENT MANUFACTURING METHOD, LIQUID JETTING HEAD MANUFACTURING METHOD, FERROELECTRIC ELEMENT, AND METHOD FOR MANUFACTURING SAME
摘要 [Problem] To provide a method for forming a crystal pattern on a desired area with a high accuracy. [Solution] This crystal pattern forming method has: an electromagnetic wave absorption layer forming step for forming an electromagnetic wave absorption layer on one surface of a substrate; an amorphous film forming step for forming an amorphous film on the electromagnetic wave absorption layer; a mask forming step for forming, on the other surface of the substrate, an electromagnetic wave blocking mask for blocking electromagnetic waves; and a crystallization step for crystallizing a predetermined region of the amorphous film by irradiating the substrate with electromagnetic waves from the other surface side of the substrate through the electromagnetic wave blocking mask.
申请公布号 WO2016132638(A1) 申请公布日期 2016.08.25
申请号 WO2015JP85025 申请日期 2015.12.15
申请人 RICOH COMPANY, LTD.;CHEN, XIANFENG 发明人 CHEN, XIANFENG
分类号 H01L41/43;B41J2/14;B41J2/16;H01L21/316;H01L41/09;H01L41/113;H01L41/187 主分类号 H01L41/43
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