METHOD AND APPARATUS FOR DIAGNOSING GENERATION OF CARBON IMPURITY FOR PLASMA METAL ORGANIC CHEMICAL VAPOR DEPOSITION PROCESS TO MINIMIZE SUBSIDENCE OF CARBON IMPURITY

摘要

PURPOSE: A method for diagnosing generation of a carbon impurity for a plasma metal organic chemical vapor deposition process is provided to minimize subsidence of a carbon impurity by controlling the carbon impurity subsided to a thin film such that the carbon impurity is generated by an excessive analysis of a precursor. CONSTITUTION: The reference spectrum data of a carbon impurity of a corresponding metal organic precursor for a plasma metal organic chemical vapor deposition process is stored in a computer(S1000). A vaporized metal organic precursor is injected to the plasma formed in a reaction furnace so as to be analyzed(S2000). The spectrum data of corresponding molecules of the plasma and the dissociated metal organic precursor is detected and transferred to the computer(S3000). The detected spectrum data is compared with the reference spectrum data to determine whether the carbon impurity is generated(S4000). An alarm sound is outputted according to the determination of the generation of the carbon impurity(S5000).