Semiconductor device including a support structure

摘要

In a semiconductor device, a support wall is formed between storage nodes to more effectively prevent leaning of a capacitor, and the storage nodes are formed using a damascene process, which may increase a contact area between each storage node and a storage node contact.

主权项

1. A semiconductor device comprising:
a first storage node; a second storage node spaced apart from and next to the first storage node along a first direction; a third storage node spaced apart from and next to the first storage node along a second direction crossing the first direction, the first, second and third storage nodes being included in a plurality of storage nodes; a support wall located between the first storage node and the third storage node so as to contact the first storage node and the second storage node; and a dielectric layer and a plate electrode disposed in a storage node region, and in a space between the first and second storage nodes, wherein the plurality of storage nodes, the dielectric layer and the plate electrode are elements of a capacitor.