MANUFACTURING METHOD OF GROUP III NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT, GROUP III NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING ELEMENT, AND LAMP

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a group III nitride compound semiconductor that can easily optimize doping concentration of a dopant element in crystal of a gallium nitride compound semiconductor and efficiently deposit a film.

SOLUTION: Disclosed is the manufacturing method of the group III nitride compound semiconductor light emitting element wherein a Ga target 47a containing a Ga element and a dopant target 47b consisting of a dopant element are used to form at least a portion of a semiconductor layer by exciting the Ga target 47a by sputtering and exciting the dopant target 47b with charged particles in a beam shape.

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