发明名称 |
Lithographic method and assembly |
摘要 |
A lithographic method of determining a sensitivity of a property of a pattern feature to change in optical aberrations of a lithographic apparatus used to provide that pattern feature. The method includes controlling a configuration of the lithographic apparatus to establish a first aberration state, forming a first image of the pattern feature with that lithographic apparatus when the lithographic apparatus is in that first aberration state, measuring a property of the image, controlling a configuration of the lithographic apparatus to establish a second, different, aberration state, forming an image of the same pattern feature with that lithographic apparatus when the lithographic apparatus is in that second aberration state, measuring a same property of the image, and using the measurements to determine the sensitivity of the property of the pattern feature to changes in the aberration state. |
申请公布号 |
US9423701(B2) |
申请公布日期 |
2016.08.23 |
申请号 |
US201213438526 |
申请日期 |
2012.04.03 |
申请人 |
ASML NETHERLANDS B.V. |
发明人 |
Zhang Shaoxian;Baselmans Johannes Jacobus Matheus;Jasper Johannes Christiaan Maria |
分类号 |
G03B27/68;G03F7/20 |
主分类号 |
G03B27/68 |
代理机构 |
Pillsbury Winthrop Shaw Pittman LLP |
代理人 |
Pillsbury Winthrop Shaw Pittman LLP |
主权项 |
1. A lithographic method of determining a sensitivity of a property of a pattern feature to change in optical aberration of a lithographic apparatus used to image that pattern feature, the method comprising:
controlling a configuration of the lithographic apparatus to establish a first aberration state, and forming a first image of the pattern feature with that lithographic apparatus when the lithographic apparatus is in that first aberration state; measuring a property of the first image; controlling a configuration of the lithographic apparatus to establish a second, different, aberration state, and forming a second image of the same pattern feature with that lithographic apparatus when the lithographic apparatus is in that second aberration state; measuring a same property of the second image; and using the measurements to determine the sensitivity of the property of the pattern feature to change in the aberration state. |
地址 |
Veldhoven NL |