SEMICONDUCTOR SUBSTRATE FOR EPITAXIAL GROWTH AND PROCESS FOR PRODUCING THE SAME

摘要

A semiconductor substrate for epitaxial growth that does not need any etching treatment as a pretreatment in the stage of performing an epitaxial growth of HgCdTe film. A CdTe compound semiconductor substrate for epitaxial growth of HgCdTe film, within a given period of time (for example, 10 hours) after mirror finish treatment thereof, is accommodated in an inert gas atmosphere to thereby regulate the ratio of Te oxide based on the total amount of Te in the substrate surface as determined by XPS measurement so as to be 30% or below.