| 摘要 |
Disclosed is a light emitting element that is provided with: a GaN substrate (11); a first distortion correction layer (12), which is formed on the GaN substrate (11), and is formed of n-type InxGa1-xN (0<x≤1); and a first low refractive index layer (13), which is formed on the first distortion correction layer (12), and is formed of n-type In1-a-bGaaAlbN, said first low refractive index layer having relationships of (a/0.98)+(b/0.8)≥1, (a/1.02)+(b/0.85)≤1, and (a/1.03)+(b/0.68)≥1. The light emitting element is also provided with: a first cladding layer (14), which is formed on the first low refractive index layer (13), and is formed of n-type AlzGa1-zN(0.03≤z≤0.06), said first cladding layer having a higher refractive index than the first low refractive index layer (13); and an active layer (16) formed on the first cladding layer (14). |
