| 摘要 |
A method is provided for programming a non-volatile memory. The method includes programming memory cells for even bit lines by programming the memory cells into a plurality of intermediate data states from an erased state, and for each of the intermediate data states, concurrently programming the memory cells to a plurality of target data states. The method also includes programming memory cells for odd bit lines by programming the memory cells into the plurality of intermediate data states from an erased state, and for each of the intermediate data states, concurrently programming the memory cells to the plurality of target data states. |
