发明名称 |
MONITORING SEMICONDUCTOR DEVICE, METHOD FOR PERFORMING DEEP N-TYPED WELL-CORRELATED (DNW-CORRELATED) ANTENNA RULE CHECK OF INTEGRATED CIRCUIT AND SEMICONDUCTOR STRUCTURE COMPLYING WITH DNW-CORRELATED ANTENNA RULE |
摘要 |
A semiconductor monitoring device includes a substrate, a die seal ring formed on the substrate, a deep n-typed well formed in the substrate under the die seal ring, and a monitoring device electrically connected to the die seal ring. The monitoring device is formed in a scribe line region defined on the substrate. A width of the deep n-typed well is larger than a width of the die seal ring. |
申请公布号 |
US2016211187(A1) |
申请公布日期 |
2016.07.21 |
申请号 |
US201514598236 |
申请日期 |
2015.01.16 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Zhang Xing Hua;Ku Chi-Fa;Liao Hong;Li Ye Chao;Yang Hui |
分类号 |
H01L21/66;H01L23/10;H01L23/528;G06F17/50 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor monitoring device comprising:
a substrate; a die seal ring formed on the substrate; a deep n-typed well formed in the substrate under the die seal ring; and a monitoring device electrically connected to the die seal ring. |
地址 |
Hsin-Chu City TW |