发明名称 |
Metal Interconnection and Method for Manufacturing the Same in a Semiconductor Device |
摘要 |
Provided is a method for manufacturing a metal interconnection in a semiconductor device. The semiconductor device fabricated according to one embodiment comprises a copper interconnection having reduced sheet and contact resistance. In the method for manufacturing the copper interconnection, a dielectric comprising a via hole is formed on a semiconductor substrate. A diffusion barrier is deposited in the via hole of the dielectric using a process including a plasma enhanced atomic layer deposition (PEALD) process. A copper metal layer can be formed on the via hole through an electroplating process.
|
申请公布号 |
US2009152735(A1) |
申请公布日期 |
2009.06.18 |
申请号 |
US20080241212 |
申请日期 |
2008.09.30 |
申请人 |
LEE HAN CHOON;BAEK IN CHEOL |
发明人 |
LEE HAN CHOON;BAEK IN CHEOL |
分类号 |
H01L23/48;H01L21/4763 |
主分类号 |
H01L23/48 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|