| 摘要 |
PROBLEM TO BE SOLVED: To provide a power MOSFET which makes conductive connection between a source electrode 7 embedded in a trench 6 and an external auxiliary source electrode 13A by a suitable connection means. SOLUTION: The semiconductor device includes: a first semiconductor layer of a first conductive type (n), and a second semiconductor layer of the first conductive type (n) adjacent to the first semiconductor layer; a third semiconductor layer of a second conductive type (p) adjacent to the second semiconductor layer; a fourth semiconductor layer of the first conductive type (n) adjacent to the third semiconductor layer; a plurality of trenches 6 which penetrates the third semiconductor layer, and reaches the second semiconductor layer; an internal source electrode 7 which is arranged in a bottom side within the trench, and covered by an insulation film; a gate electrode 8 which is arranged on a top side of the internal source electrode, and covered by the insulation film; a drain electrode 12 electrically connected with the first semiconductor layer; and a source electrode electrically connected with the fourth semiconductor layer. Additionally, it is provided with an external gate electrode 14 connecting the gate electrode with the outside on an exterior of the gate electrode; and an external source electrode 13 connecting the internal source electrode with the outside on the exterior of the gate electrode 14. COPYRIGHT: (C)2008,JPO&INPIT
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