| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a silicon nitride film at high film deposition rate. SOLUTION: Silane gas, ammonia gas and nitrogen gas are used for the raw material gas. The flow rate of the nitrogen gas is set to be 0.2-20 times the total flow rate of the silane gas and the ammonia gas. The silicon nitride film is formed by an inductively coupled plasma-enhanced chemical vapor deposition (ICP-CVD) method. COPYRIGHT: (C)2009,JPO&INPIT
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