| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can accelerate switching speed. SOLUTION: The semiconductor device 20 is provided with an n-type epitaxial layer 2 having a plurality of trenches 3 that are arranged at specified spacing (b) with each other, an embedded electrode 5 that is formed inside the trench 3 with a silicon oxide film 4 interposed so that each of the trenches 3 may be embedded, and a metal layer 7 that is provided above the embedded electrode 5 with a silicon oxide film 6 interposed and is capacitance-coupled with the embedded electrode 5. In addition, the semiconductor device 20 is constructed so that a region among the adjoining trenches 3 may be a channel (current passage) 11. Current running in the channel 11 is blocked by covering the area with a depletion layer formed in the periphery of the trench 3, and current may flow through the channel 11 by dissolving the depletion layer in the periphery of the trench 3. COPYRIGHT: (C)2009,JPO&INPIT
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