Current switching device with IGCT

摘要

An exemplary current switching device includes an integrated gate-commutated thyristor with an anode, a cathode, and a gate, wherein a current between the anode and the cathode is interruptible by applying a switch-off voltage to the gate; and a gate unit for generating the switch-off voltage. The gate unit and a connection of the gate unit to the gate establish a gate circuit having a stray impedance. The gate unit is adapted for generating a spiked switch-off voltage with a maximum above a breakdown voltage (VGRMAX) between the cathode and the gate, such that the switch-off voltage at the gate stays below the breakdown voltage (VGRMAX) due to the stray impedance of the gate circuit.

主权项

1. A current switching device, comprising:
an integrated gate-commutated thyristor with an anode, a cathode, and a gate, wherein a current between the anode and the cathode is interruptible by applying a switch-off voltage to the gate; and a gate unit for generating the switch-off voltage, wherein the gate unit and a connection to the gate establishes a gate circuit having a stray impedance, wherein the gate unit is configured for generating the switch-off voltage, which comprises a constant switch-off voltage and a spiked switch-off voltage, wherein the spiked switch-off voltage has a spike width smaller than 30 microseconds, with a maximum voltage above a breakdown voltage (VGRMAX) between the cathode and the gate, such that the switch-off voltage at the gate stays below the breakdown voltage (VGRMAX) due to the stray impedance of the gate circuit, wherein the spiked switch-off voltage is generated in a first channel of the gate unit, wherein the gate unit includes a second channel configured for generating a constant switch-off voltage after the spiked switch-off voltage has been generated, the constant switch-off voltage being lower than the breakdown voltage (VGRMax) between the cathode and the gate.