发明名称 Fast bias for power amplifier gating in a TDMA application
摘要 RF amplifier bias system for TDMA application. A bias circuit ( 200 ) is coupled to an RF power amplifier ( 201 ) circuit. The bias circuit includes a charge pump/sink circuit ( 215 ), a voltage reference circuit ( 204 ) and voltage scaling circuit ( 208, 210, 214 ). The bias system provides fast response time when transitioning between various bias voltages applied to an FET RF transistor ( 244 ).
申请公布号 US2007285172(A1) 申请公布日期 2007.12.13
申请号 US20060449313 申请日期 2006.06.08
申请人 HARRIS CORPORATION 发明人 MANICONE ANTHONY;HARRIS MATTHEW
分类号 H03F3/04 主分类号 H03F3/04
代理机构 代理人
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