CRYSTALLIZATION APPARATUS AND METHOD OF SILICON THIN FILM

摘要

An apparatus for crystallizing a silicon thin film is provided to prevent the image quality of a flat panel display from being deteriorated by stripes by greatly reducing stripes in a polycrystalline silicon thin film. A solid laser source(10) generates a laser beam. A wavelength conversion unit(20) converts the wavelength of the laser beam generated by the solid laser source. A splitter(30) splits a laser beam with a first wavelength and a laser beam with a second wavelength from the converted laser beam. A first mirror(40) diverts the direction of the laser beam with the first wavelength and irradiates the diverted laser beam with the first wavelength to an amorphous silicon substrate(70). A second mirror(50) divers the direction of the laser beam with the second wavelength and irradiates the diverted laser beam with the second wavelength to the amorphous silicon substrate. The first mirror is constructed to irradiate the laser beam with the first wavelength to the front surface of the substrate, and the second mirror is constructed to irradiate the laser beam with the second wavelength to the front or/and back surfaces of the substrate. The laser bema can be tuned by a beam tuning unit(60).