发明名称 |
Method of improving line roughness in substrate processing |
摘要 |
Provided is a method for processing a semiconductor substrate to reduce line roughness, the method comprising: positioning a substrate in a film-forming system, the film-forming system comprising a chuck having a clamping mechanism configured to hold the substrate in a processing chamber and flex the substrate by displacing a center of the substrate relative to a peripheral edge of the substrate so as to create a concave surface during processing; coating the substrate with a layer of material; performing a post apply bake process; flexing the substrate to create the concave surface either during the post apply bake or following the post apply bake process, wherein the concave surface has a degree of concavity measured at the center of the substrate that exceeds a base number of microns; and unflexing the substrate and inducing tensile stress in the layer of material on the substrate. |
申请公布号 |
US9508557(B2) |
申请公布日期 |
2016.11.29 |
申请号 |
US201514676356 |
申请日期 |
2015.04.01 |
申请人 |
Tokyo Electron Limited |
发明人 |
Kang Hoyoung |
分类号 |
H01L21/304;H01L21/027;H01L21/324;H01L21/311;H05B3/22;H01L21/687;H01L21/302;H01L21/3065;H01L21/67;H01L21/677 |
主分类号 |
H01L21/304 |
代理机构 |
Wood Herron & Evans LLP |
代理人 |
Wood Herron & Evans LLP |
主权项 |
1. A method of preparing a thin film, comprising: receiving a substrate having a layer of photoresist applied on the substrate; performing a post application bake process; flexing the substrate to create a concave surface either during the post application bake process or following the post application bake process, wherein the concave surface has a degree of concavity measured at the center of the substrate that exceeds a target, non-zero deflection; and unflexing the substrate and inducing tensile stress in the layer of photoresist on the substrate. |
地址 |
Tokyo JP |