发明名称 Method of improving line roughness in substrate processing
摘要 Provided is a method for processing a semiconductor substrate to reduce line roughness, the method comprising: positioning a substrate in a film-forming system, the film-forming system comprising a chuck having a clamping mechanism configured to hold the substrate in a processing chamber and flex the substrate by displacing a center of the substrate relative to a peripheral edge of the substrate so as to create a concave surface during processing; coating the substrate with a layer of material; performing a post apply bake process; flexing the substrate to create the concave surface either during the post apply bake or following the post apply bake process, wherein the concave surface has a degree of concavity measured at the center of the substrate that exceeds a base number of microns; and unflexing the substrate and inducing tensile stress in the layer of material on the substrate.
申请公布号 US9508557(B2) 申请公布日期 2016.11.29
申请号 US201514676356 申请日期 2015.04.01
申请人 Tokyo Electron Limited 发明人 Kang Hoyoung
分类号 H01L21/304;H01L21/027;H01L21/324;H01L21/311;H05B3/22;H01L21/687;H01L21/302;H01L21/3065;H01L21/67;H01L21/677 主分类号 H01L21/304
代理机构 Wood Herron & Evans LLP 代理人 Wood Herron & Evans LLP
主权项 1. A method of preparing a thin film, comprising: receiving a substrate having a layer of photoresist applied on the substrate; performing a post application bake process; flexing the substrate to create a concave surface either during the post application bake process or following the post application bake process, wherein the concave surface has a degree of concavity measured at the center of the substrate that exceeds a target, non-zero deflection; and unflexing the substrate and inducing tensile stress in the layer of photoresist on the substrate.
地址 Tokyo JP