| 摘要 |
PURPOSE:To enhance the reliability of an insulated semiconductor device having an inorganic insulating member, a composite metal plate and a semiconductor element by setting the thermal expansion coefficient of the metal plate to the intermediate value of the coefficients of the insulating member and a semiconductor substrate. CONSTITUTION:Two alumina plates 2 are bonded via a solder layer 101 onto a metal supporting plate 1, and a composite metal plate 3 is bonded via a solder layer 102 onto the plates. Semiconductor substrates 401-403 are soldered directly to the plate 3. The apparent thermal expansion coefficient of the metal plate is 6.0X10<-6>/ deg.C, which is intermediate between 6.3X10<-6>/ deg.C of the alumina and 3.5X10<-6>/ deg.C of the Si of the semiconductor substrate. In this manner, thermal distortion is eliminated, thereby preventing the deformation and damage and enhancing the reliability of the device. |
