| 摘要 |
PURPOSE:To form and transfer a clean circuit pattern by a method wherein a resist dust particle is exposed in the same manner as an exposure operation of a resist on the surface and a development operation and a rinsing operation are executed. CONSTITUTION:While a support claw 17 to support one part at an end edge of a water 1 is attached, the rear of the wafer 1 is exposed. Regarding a wavelength of an exposure beam, g rays whose wavelength is the same as that used for an exposure operation of a resist 2 on the surface or ultraviolet rays are used. Then, a position of the support claw 17 is changed; an unexposed part under the claw is exposed; the rear is developed. At a suction stand 18 of the wafer 1, the wafer 1 is sucked through vacuum suction holes 19; a developing solution or a rinsing solution is spouted from a rotary spray nozzle 21 for rear use which is inserted into a waste-fluid pipe 20; the resist dust particle 3 on the rear of the exposed wafer is developed and is decomposed; the particle is washed away through the waste-fluid pipe 20. At the same time, only a peripheral part of the rear is developed by using nozzles 22 to be exclusively used for the peripheral part of the rear; the resist dust particle 3 transferred from the other previously sucked wafer 1 is cleaned. By this setup, the resist dust particle adhering to the rear of the wafer is reduced; while the wafer is kept clean, it can be transferred. |
