| 摘要 |
PURPOSE: To provide an irradiance measuring method and its device capable of directly measuring the irradiance of a laser beam and the like by only one time measurement. CONSTITUTION: This device is provided with a thin film semiconductor 1 for emitting a secondacy radiation beam LC due to a measured light beam LM, a spectral diffraction means 2 for spectrally diffract light beams of peak wavelength of two peaks having intensity corresponding to the irradiance of the predetermined measured light beam LM among plural peaks contained in the secondary radiation beam LC, into partial radiation beams LB, LD, and a calculating means 7 for calculating the irradiance of the measured light beam IM based on the intensity of the partial radiation beams LB, LD. Also, the irradiance of the measured light beam LM is measured based on resistance changes of two quantam well layers of which resistance is changed through the absorption of the secondary radiation beam LC of a wavelength corresponding to the peak. Also, a filter is provided which transmits and inputs into a measuring device only a light beam of a specified wavelength band contained in the measured light beam LM. Further, a light beam, containing a wavelength band corresponding to the secondary radiation beam and being longer than the shortest wavelength in the wavelength band, is absorbed and inputted into the measuring device by a filter. |
