发明名称 |
Semiconductor integrated circuit having signal level conversion circuit |
摘要 |
A semiconductor integrated circuit having a signal level converter is disclosed. The converter includes a plurality of first insulated gate field effect transistors each having a thin gate insulating film and formed on a low voltage or a ground voltage line side and a plurality of second insulated gate field effect transistors each having a thick gate insulating film and formed on a high voltage power supply line side.
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申请公布号 |
US4952825(A) |
申请公布日期 |
1990.08.28 |
申请号 |
US19890322787 |
申请日期 |
1989.03.13 |
申请人 |
NEC CORPORATION |
发明人 |
YOSHIDA, HIROSHI |
分类号 |
H01L21/8238;G11C11/407;G11C11/409;H01L27/092;H03F3/34;H03F3/347;H03K3/356;H03K5/02;H03K17/06;H03K17/687 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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