发明名称 Semiconductor integrated circuit having signal level conversion circuit
摘要 A semiconductor integrated circuit having a signal level converter is disclosed. The converter includes a plurality of first insulated gate field effect transistors each having a thin gate insulating film and formed on a low voltage or a ground voltage line side and a plurality of second insulated gate field effect transistors each having a thick gate insulating film and formed on a high voltage power supply line side.
申请公布号 US4952825(A) 申请公布日期 1990.08.28
申请号 US19890322787 申请日期 1989.03.13
申请人 NEC CORPORATION 发明人 YOSHIDA, HIROSHI
分类号 H01L21/8238;G11C11/407;G11C11/409;H01L27/092;H03F3/34;H03F3/347;H03K3/356;H03K5/02;H03K17/06;H03K17/687 主分类号 H01L21/8238
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