Semiconductor memory device and method of fabricating the same

摘要

A semiconductor memory device includes a stack including gate electrodes and insulating layers that are alternately and repeatedly stacked on a substrate. A cell channel structure penetrates the stack. The cell channel structure includes a first semiconductor pattern contacting the substrate and a first channel pattern on the first semiconductor pattern. The first semiconductor pattern extends to a first height from a surface of the substrate to a top surface of the first semiconductor pattern. A dummy channel structure on the substrate and spaced apart from the stack. The dummy channel structure includes a second semiconductor pattern contacting the substrate and a second channel pattern on the second semiconductor pattern. The second semiconductor pattern extends to a second height from the surface of the substrate to a top surface of the second semiconductor pattern. The first height is greater than the second height.

主权项

1. A semiconductor memory device, comprising:
a substrate; a stack on the substrate, the stack including gate electrodes and insulating layers that are alternately and repeatedly stacked on the substrate; a cell channel structure penetrating the stack,
the cell channel structure including a first semiconductor pattern contacting the substrate and a first channel pattern on the first semiconductor pattern,the first channel pattern contacting the first semiconductor pattern,the first semiconductor pattern extending to a first height from a surface of the substrate to a top surface of the first semiconductor pattern; and a first dummy channel structure on the substrate,
the first dummy channel structure being spaced apart from the stack,the first dummy channel structure including a second semiconductor pattern contacting the substrate and a second channel pattern on the second semiconductor pattern,the second channel pattern contacting the second semiconductor pattern,the second semiconductor pattern extending to a second height from the surface of the substrate to a top surface of the second semiconductor pattern, andthe first height being greater than the second height.