| 摘要 |
<p>PURPOSE: To provide thin-film transistors which are simple in structure, are not affected by stray transistors, etc., and make it possible to obtain images good for mixing when used for an image display device by forming drain electrodes between source electrodes and source bus lines. CONSTITUTION: Semiconductor layers of an (n) type or (p) type and transparent electrodes formed on the surface of an insulatable substrate are patterned to a prescribed shape, by which display pixels electrodes 15 and source bus lines 4 are formed. Second source electrodes 8 disposed nearly parallel with the source bus lines and source connecting electrodes 9 for connecting the second source electrodes 8 and the source bus lines 4 are formed in the positions near the left upper corners of the display pixel electrodes 15 of the source bus lines 4. The ends at the left upper corners of the display pixel electrodes 15 are elongated and disposed so as to be held between the source bus lines 4 and the second source electrodes 8, by which the drain electrodes 10 are formed.</p> |
