| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide an SRAM semiconductor of which power consumption is reduced. SOLUTION: Switching MOS transistors 50 are provided between respective power supply lines 51 being selected by respective word lines W of the row decoders 2 in an SRAM and a power supply line 52 on the voltage supply side. The switching MOS transistor 50 is switched by a select signal for word line W and the power supply line 51 of a memory cell group is interrupted from the power supply line 52 on the voltage supply side at the time of selecting a memory cell 10. According to the arrangement, a low power consumption SRAM semiconductor can be realized.</p> |
