| 摘要 |
PURPOSE: A method for manufacturing a capacitor of a semiconductor memory device is provided to be capable of improving the stabilization of the process, increasing the capacity of a capacitor, and improving the degree of integration. CONSTITUTION: A contact hole is formed at the upper portion of a semiconductor substrate(10) for opening a lower plug pad(12). A metal layer is deposited on the entire surface of the resultant structure. A plug(16) is formed at the inner portion of the contact hole. The first negative slope photoresist pattern is formed at the upper portion of the resultant structure. A lower portion(20') of a cylinder type lower storage node is formed on the resultant structure. The cylinder type lower storage node is completed by forming a sidewall portion at the predetermined portion of the lower portion. A capacitor insulating process is carried out on the resultant structure. The second negative slope photoresist pattern is formed on the resultant structure for opening a capacitor forming region. Then, a dielectric layer(30') and an upper storage node(32') are formed at the upper portion of the resultant structure.
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