| 摘要 |
PURPOSE:To obtain a photomask of high accuracy for LSI, etc. by forming a film of a specified metal and a film of the metal oxide on a glass substrate; coating a polymer resist; forming a pattern by applying electron beams or the like; and carrying out specified etching. CONSTITUTION:Cr film 12 and chromium oxide film 13 are formed on glass substrate 11 by sputtering or other method, and photoresist or electron beam resist film 14 is coated. The films are then exposed to light or electron beams through a pattern for LSI or the like and developed to form opening portion 15, thus obtaining a resist pattern. After baking to improve the adhesive properties of films 13, 14, exposed film 13 is removed by etching with mixed gas plasma of halogen type gas such as Cl2 and CO, NO, H2 or the like. Film 13 is then removed by etching with O2 plasma or the like, and film 12 is removed by etching with mixed gas plasma contg. Cl2 and O2 to obtain desired mask E. |
