发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To prevent the electromigration due to current concentration by a device wherein a poly-Si layer is coated to cover an end region of the contact surface between a resistance layer such as a diffusion layer formed on the main plane of a substrate and a low resistance layer formed of Al or others, including a non-contact part adjacent to the end region. CONSTITUTION:An Al wiring layer 12 is connected through an opening of an insulative film to a resistor 11 in a contact state, which is made of an N<+> diffusion layer formed in a P type substrate (for example, a source/drain region of MOSFET). A poly-Si layer 13 is coated over a part of the insulative film and a part of the N<+> layer 11 to cover an end portion (X=0) of the openings so that a current flowing from the diffusion layer 11 to the Al layer 12 is shunted at the end part of the opening. Thus, the resistance layer 13 formed of poly-Si functions to prevent concentration of currents. As a result, it becomes possible to prevent the occurrence of electromigration in the Al layer 12 and also to avoid troubles such as disconnections without increasing a width of the contact surface.
申请公布号 JPS5773961(A) 申请公布日期 1982.05.08
申请号 JP19800149895 申请日期 1980.10.25
申请人 TOKYO SHIBAURA DENKI KK 发明人 MINAMI KENJI
分类号 H01L27/04;H01L21/3205;H01L21/822;H01L23/52;H01L23/532 主分类号 H01L27/04
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